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Университет Торонто (Канада)

В 2003 году сотрудники ЗАО "НТО" успешно провели инсталляцию установки молекулярно-лучевой эпитаксии ATC-EP3 (глубоко модернизированная установка МЛЭ советского производства ЭП1203) в Первый в Канаде центр нанотехнологий Университета г. Торонто (The Centre for Advanced Nanotechnology). Установка до сих пор успешно функционирует.

Ниже приведен список публикаций сотрудников Университета:

  1. M. Blumin, H.E. Ruda, I.G. Savelyev, A. Shik and H. Wang 
    Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface. Journal of Applied Physics  V.99, 093518 (2006)
  2. C.Scurtescu, Z.Y.Zhang, Y.Y.Tsui, R.Fedosejevs, M.Blumin, I.Saveliev, S.Yang, H.E.Ruda
     Quantum Dot Absorber for ultrafast laser pulses generation.
    InterAmerican Laser Workshop, Toronto, April 2006
  3. Z. Y. Zhang, C. Scurtescu, M. T. Taschuk, Y. Y. Tsui, and R. Fedosejevs, M. Blumin, I. Saveliev, S. Yang, and H. E. Ruda
    GaAs based semiconductor quantum dot saturable absorber mirror grown by molecular beam epitaxy.  Proc. SPIE, Vol. 6343, 63432N (2006);
  4. CRISTIAN SCURTESCU, ZIYANG ZHANG, JOHN ALCOCK, ROBERT FEDOSEJEVS, MARINA BLUMIN, IGOR SAVELIEV, SUSAN YANG, HARRY RUDA, YING TSUI
    Quantum Dot Saturable Absorber for passive mode-locking of Nd:YVO4 lasers at 1064nm. APPLIED PHYSICS B-LASERS AND OPTICS   Volume: 87   Issue: 4   Pages: 671-675    2007
  5. C. Scurtescu, Z. Y. Zhang, A. J. Alcock, R. Fedosejevs, M. Blumin, I. Saveliev, S. Yang, H. E. Ruda, Y. Y. Tsui
    InAs/GaAs Quantum Dot Saturable Absorber Mirror for Passive Mode-Locking of Nd:YVO4 Lasers at 1064 nm.
    CLEO/QELS 2007 in Baltimore, Maryland. May 6-11, 2007, oral presentation
  6. Darija Susac,  Joseph Salfi, Igor Saveliev, Marina Blumin, Harry Ruda,  and Karen L. Kavanagh
    HR TEM Characterization of InAs/GaAs Core-Shell Nanowires
    CIPI Annual meeting presentation, 2008
  7. Azar Alizadeh, David Hays, Seth T Taylor, Chris Keimel, Ken R Conway, Lauraine Denault, Kasiraman Krishnan, Vicki H Watkins, Rosalyn Neander, Jay S Brown, Andreas Stintz, Sanjay Krishna, Marina Blumin, Igor Saveliev, Harry E Ruda, Edit Braunstein
    Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks. JOURNAL OF APPLIED PHYSICS   Volume: 105   Issue: 5 Article Number: 054305   Published: MAR 1 2009
  8. Alizadeh, A (Alizadeh, Azar); Hays, D (Hays, David); Keimel, C (Keimel, Chris); Watkins, VH (Watkins, Vicki H.); Conway, KR (Conway, Ken R.); Taylor, ST (Taylor, Seth T.); Neander, R (Neander, Rosalyn); Denault, L (Denault, Lauraine); deSouza, C (deSouza, Christina); Saveliev, I (Saveliev, Igor); Blumin, M (Blumin, Marina); Ruda, HE (Ruda, Harry E.); Braunstein, E (Braunstein, Edit); Jones, C (Jones, Colin) Infrared p-i-n photodiodes based on InAs quantum dots grown on 20 nm patterned GaAs. APPLIED PHYSICS LETTERS, 94 (16): Art. No. 163112 APR 20 2009
  9. Darija Susac, Igor Saveliev, M. Blumin, Harry E. Ruda, Karen L. Kavanagh
    Strain Relaxation in InAs/GaAs (001) Core/Shell Hetero-Nanowires.
    MRS2009, presentation
  10. J. Salfi, S. Roddaro, D. Ercolani, L. Sorba, I. Savelyev, M. Blumin, H.E. Ruda, and F. Beltram  Electronic properties of quantum dot systems realized in semiconductor nanowires.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Volume: 25   Issue: 2   Special Issue: Sp. Iss. SI Article Number: 024007   Published: FEB 2010
  11. J. Salfi, I.G. Savelyev, M. Blumin, S.V. Nair, H.E. Ruda
    Direct observation of single-charge-detection capability of nanowire field-effect transistors.   
    NATURE NANOTECHNOLOGY   Volume: 5   Issue: 10   Pages: 737-741   Published: OCT 2010
  12. de Souza, C.F.  Alizadeh, A.  Nair, S.  Saveliev, I.  Blumin, M.  Ruda, H.E.  Hays, D.C.  Watkins, V.H.  Conway, K.R.  Braunstein, E.   . Mechanism of IR Photoresponse in Nanopatterned InAs/GaAsQuantum Dot p-i-n Photodiodes IEEE Journal of Quantum Electronics, 2010, Volume: 46, Issue: 5 pp. 832 – 836
  13. Ruda HE (Ruda, Harry E.), Salfi J (Salfi, Joe), Saveliev I (Saveliev, Igor), Blumin M (Blumin, Marina) Carrier Transport in Molecular Beam Epitaxially Grown GaAs/InAs Core-Shell Nanowires
    INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2    Pages: 44-44    Published: 2010  
  14. Joe Salfi,  Nicola Paradiso,  Stefano Roddaro,  Stefan Heun,  Selvakumar V. Nair,†,  Igor G. Savelyev, Marina Blumin, Fabio Beltram, and Harry E. Ruda Probing the Gate-Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals
    ACS Nano VOL. 5  NO. 3  2191–2199  2011
  15. Karen L. Kavanagh, Joe Salfi, Igor Savelyev, Marina Blumin, and Harry E. Ruda Transport and strain relaxation in wurtzite InAs–GaAs core-shell Heterowires.
    APPLIED PHYSICS LETTERS 98, 152103 2011
  16. Karen L. Kavanagh,* Igor Saveliev, Marina Blumin, Greg Swadener, and Harry E. Ruda      Faster radial strain relaxation in InAs-GaAs core-shell heterowires
    Journal of Applied Physics 111, 044301 (2012)
  17. Alex Hayat, Parisa Zareapour, Shu Yang F. Zhao, Igor G. Savelyev, Marina Blumin, Harry E. Ruda, Aephraim M. Steinberg, and Kenneth S. Burch High-Temperature Hybrid Superconductor-Semiconductor Tunnel Diode  PRL sent