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STE3526

MBE complex for hybrid III-V and II-VI semiconductor heterostructures

General description and field of application

Two-Growth Chamber complex STE3526 is specially designed as a modern MBE technology platform for hybrid III-V and II-VI semiconductor heterostructures growing.

Field of application of STE3526 is R&D and pilot production of epitaxial nanostructures based on wide-band-gap II-VI materials (Cd (Zn)Se/ZnMgSSe) on high-quality III-V buffer layers grown on GaAs substrate. One of the special features of STE3526 is the possibility of high purity UHV wafer transport from III-V to II-VI Chamber to avoid uncontrolled contaminations of the GaAs buffer layer surface before II-VI materials growing.

MBE Complex configuration and technical parameters

• III-V Growth Chamber with specific material sources
• II-VI Growth Chamber with specific material sources
• Preparation Camber with the possibility of preliminary thermal removal of oxides from GaAs substrate
• Storage buffer Chamber
• Load-Lock Chamber with storage cassette and quick-access door
• Semiautomatic UHV wafer transport system
• Process control system with original SemiTEq's process software

Key advantages

• «Lab-to-fab“ ideology allows to cover the wide range of applications from fundamental R&D to pilot production of device nanostructures
• The Growth Chambers design taking into account III-V and II-VI material specifi
• UHV wafer transport between Chambers
• Valved, high volume sells for volatile species (As, Se, S)
• Full set of analytics for in-situ monitoring of growth process (RHEED, RGA, BFM, pyrometer)
• Quick technological start providing with technical and technological support
• Easy work and maintenance

Main datasheet

• Ultimate vacuum level in the Growth Chambers after the complex bakeout: <5×10^-11 T
• Maximum wafer diameter: 100 mm or 3×2» block
• Modifying growth geometry, the «source to substrate» distance: 135¸210 mm
• Source shutters drive design: magnetic rotary motion with shockless pneumatic actuator
• Heating element design of Growth Manipulator: PBN/PG/PBN
• Maximum work temperature of Growth Manipulator no less than 900^oC
• Temperature of substrate annealing in Preparation Chamber, no less than 650^îÑ
• Bakeout temperature of the Growth Chamber, no less than 200^îÑ