STE3N2
MBE system for group III nitrides growthSTE3N2 MBE System is a two chamber version of the STE3N3. This System does not include itself the Preparation Chamber, therefore the Growth Chamber is directly coupled with the Load-Lock. An absence of buffer UHV chamber between the Load-Lock and the Growth Chamber practically does not affect epitaxial layer properties due to III-nitrides specific. However, peak and stable III-nitride characteristics can be achieved in full three-chamber STE3N3 version. From the other side, the certain operational advantage of the STE3N2 is a slightly lesser «footprint» as compared to the STE3N3.
The Growth Chamber of the STE3N2 is the same with STE3N3 and performs the same outstanding advantages as regards to the III-nitrides MBE growth.
STE3N2 MBE System specification is the same with STE3N3 excluding the Preparation Chamber and appropriate options.
STE3N2 key advantages & System datasheet are the same with three-chamber version excluding data which is defined by the Preparation Chamber presence.
Like the three-chamber version, delivery of the STE3N2 is attended by the same technology support program.