STE3532
MBE system for III - V / II - VI conventional compounds.STE3532 MBE System was designed as a modern technology platform for conventional III-V or II-VI semiconductor compounds.
STE3532 delivers high quality growth on up to 100mm or 3×2“ wafers with excellent uniformity. It makes the System as ideal solution for R&D and pilot production. Growth chamber geometry is vertical, the same with all state of the art production MBE Systems. STE3532 concept allows connecting additional chambers or, in turn, integrating MBE System into multipurpose UHV cluster tool. STE3526 two-Growth Chamber version allows hybrid II-VI/III-V heterostructures growing.
STE3532 was developed by SemiTEq as a result of more than 20 years experience of our key MBE experts in the field of InAlGaAs/GaAs heteroepitaxy for high power lasers and RF-devices. As a result, all technical solutions are based on deep understanding of GaAs molecular beam epitaxy process, approved by technology practice and verified by excellent GaAs epilayer quality and test device characteristics. All growth parameters are carefully controlled by necessary process automation support – it results in routinely achievement of high level epiwafers quality.
STE3532 growth chamber integrates specially designed cryopanels for effective V (VI) Group volatile species. Its design takes into account geometrical elimination of material drop from the upper cryopanel side to the sources aperture. All the way from the Load-Lock to the Growth Manipulator the wafer is at face down position – it dramatically reduces uncontrolled contaminations.
One of the unique features of STE3532 is the possibility to modify growth geometry due to significant wafer growth position vertical shift. This transformation allows combining in one MBE System two growth positions: research, in which the uniform growth is possible on the 2“ wafer with RHEED without wafer rotation and
optimum, which provides high uniformity growing of 100mm or 3×2» wafers with rotation.
STE3532 key advantages:
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The Growth Chamber design taking into account III—V and II—VI materials specific;
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Two growth positions for R&D and pilot production;
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Cryopanel design providing elimination of the material drop to the sources aperture;
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Modular design allowing to connect additional chambers or include in the cluster tool;
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Outstanding purity of the System growth environment;
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Full set of necessary growth monitoring techniques in a base System configuration;
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Wide and effective technology support.