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STE3N3

STE3N3 is R&D MBE system specially designed for ultra high temperature (>1200°C on wafer surface) III-nitride growth using ammonia as an active nitrogen source. Expanded cryopanel surface as well as appropriate pumping system configuration allows working 7/24 at high (up to 400sccm) ammonia flow. Use of RF-plasma source instead/or in combination with ammonia injector is possible too. The main STE3N3 features mentioned above provide an outstanding range of III-nitrides growth process characteristics and allow reaching less than 5×108 cm-2 dislocation density in resulting GaN layer grown using thick high temperature AlN buffer layer on different mismatched substrates. At the same time, concentration of free carriers in non-intentionally doped GaN layers is ~5×1015 cm-3 at Hall mobility 110 cm2/V×sec.

STE3N3 delivers high quality growth on up to 100mm or 3×2» wafers with excellent uniformity. It makes the System an ideal solution for R&D and pilot production. Growth chamber geometry is vertical, the same with all state of the art production MBE Systems. STE3N3 concept allows connecting additional chambers or, in turn, integrating MBE System into multipurpose UHV cluster tool.

STE3N3 was developed by SemiTEq via an intent technology investigations in our own laboratory. As a result, all technical solutions are based on III-nitrides specific, approved by technology practice and verified by excellent III-N epilayer quality and test device characteristics. All growth parameters are carefully controlled by necessary process automation support – it results in routinely achievement of high level epiwafers quality.

STE3N3 key advantages:

• Outstanding for MBE, very high wafer growth temperatures allowing to achieve high quality, thick (up to several microns) high temperature AlN buffer layer;
• Specially designed, patented substrate holder providing high temperature uniformity;
• Independence of the technology based on this AlN buffer with respect to different mismatched to III-nitrides substrate material (sapphire, Si, SiC etc.);
• Cryopanel design as well as pumping efficiency & geometry providing effective MBE System operation in extreme (high ammonia flow + high wafer temperature) conditions 7/24;
• Specific, high reliable Al source providing AlN growth rate up to 2μm/sec under high ammonia environment;
• Full set of necessary growth monitoring techniques in a base System configuration;
• Wide and effective technology support.